专利名称：Semiconductor contact structure including a
spacer formed within a via and method ofmanufacturing the same
发明人：Huilong Zhu,Haizhou Yin,Zhijiong Luo申请号：US12996721申请日：20100927公开号：US08610275B2公开日：20131217
专利附图：
摘要：The present invention discloses a semiconductor structure and a method formanufacturing the same. The semiconductor structure comprises a semiconductor
substrate, a local interconnect structure connected to the semiconductor substrate, andat least one via stack structure electrically connected to the local interconnect structure,wherein the at least one via stack structure comprises a via having an upper via and alower via, the width of the upper via being greater than that of the lower via; a via spacerformed closely adjacent to the inner walls of the lower via; an insulation layer coveringthe surfaces of the via and the via spacer; a conductive plug formed within the spacesurrounded by the insulation layer, and electrically connected to the local interconnectstructure. The present invention is applicable to manufacture of a via stack in the filed ofmanufacturing semiconductor.
申请人：Huilong Zhu,Haizhou Yin,Zhijiong Luo
地址：Poughkeepsie NY US,Poughkeepsie NY US,Poughkeepsie NY US
国籍：US,US,US
代理机构：Kinney & Lange, P.A.
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容