2SA1943-JCST

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO – 3P TO-3P Plastic-Encapsulate Transistors

2SA1943 TRANSISTOR (PNP)

FEATURES

z High Collector Current Capability z High Power Dissipation z High Frequency z High Voltage

z Complement to 2SA5200

APPLICATIONS

z High-Fidelity Audio Output Amplifier z General Purpose Power Amplifier

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

1. BASE 2. COLLECTOR 3. EMITTER Symbol Parameter Value Unit VCBO VCEO VEBO IC PC PCM RθJA Tj Tstg

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Collector Power Dissipation

Collector Power Dissipation (TC=25℃) Thermal Resistance From Junction To AmbientJunction Temperature Storage Temperature

-230 -230 -5 -15 3.5 150 36 150 -55~+150

V V V A W W ℃/W℃ ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain

Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Transition frequency *Pulse test

Symbol V(BR)CBO V(BR)CEO

ICBO hFE(1) hFE(2) VCE(sat)

VBE

**

Test conditions Min Typ Max Unit

IC==-0.1mA,IE0 -230=IC=-50mA,IB0 -230 V V V(BR)EBO =IE=-0.1mA,IC0 -5 V =VCB=-230V,IE0 -5 μA =VCE=-5V, IC-1A 55 160 =VCE=-5V, IC-7A 35 IC=-8A,IB=-0.8A -3 V =VCE=-5V, IC-7A -1.5 V VCB=-10V,IE=0, f=1MHz VCE=-5V,IC=-1A

360

pF MHz

VEB=-5V,IC0 -5 μA IEBO =Cob fT

30

CLASSIFICATION OF hFE (1)

RANK R RANGE

O 55-110 80-160

A,Jul,2012