Semiconductor memory device of single-bit-line dri

专利名称：Semiconductor memory device of single-bit-line drive type

发明人：Tomoaki Yabe申请号：US11538983申请日：20061005公开号：US07460408B2公开日：20081202

专利附图：

摘要：A semiconductor memory device includes a plurality of word lines, first andsecond bit lines, a plurality of memory cells which are connected to the first and secondbit lines, a differential amplifier which is connected to one end of the first bit line and one

end of the second bit line, a reference-current generating circuit which is connected tothe other end of the second bit line and which generates a reference-current smallerthan the cell current of the memory cells, and a dummy word line which is connected tothe reference-current generating circuit, to activate the reference-current generatingcircuit in order to read data.

申请人：Tomoaki Yabe

地址：Kawasaki JP

国籍：JP

代理机构：Oblon, Spivak, McClelland, Maier & Neustadt, P.C.

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